Semiconductor light emitting device and method for manufacturing same

ABSTRACT

According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2010-130519, filed on Jun. 7,2010; the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor lightemitting device and a method for manufacturing the same.

BACKGROUND

White LED (Light Emitting Diode) light emitting devices, which emitwhite light by a combination of a fluorescer and a semiconductor lightemitting element such as a blue LED, have been developed as small andlow power-consumption light emitting devices.

For example, a known semiconductor light emitting device has aconfiguration in which a fluorescer is coated onto an LED chip surfaceafter the LED chip is die bonded to a leadframe or a conductivesubstrate and wire bonding is performed. However, in such asemiconductor light emitting device, the device is large and downsizingis impeded because members other than the LED chip such as theleadframe, the conductive substrate, the bonding wires, etc., arenecessary.

In semiconductor light emitting elements, the surface area of the n-sideelectrode provided on the n-type semiconductor layer is often set to besmaller than the p-side electrode provided on the p-type semiconductorlayer to improve, for example, the heat dissipation and the luminousefficiency. When downsizing the semiconductor light emitting element,for example, the n-type electrode becomes small and it becomes difficultto perform connections.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A and FIG. 1B are schematic views illustrating the configurationof a semiconductor light emitting device according to a firstembodiment;

FIG. 2A to FIG. 2E are schematic cross-sectional views in order of theprocesses, illustrating a method for manufacturing the semiconductorlight emitting device according to the first embodiment;

FIG. 3A to FIG. 3E are schematic cross-sectional views in order of theprocesses, illustrating a method for manufacturing the semiconductorlight emitting device according to the first embodiment;

FIG. 4A to FIG. 4E are schematic cross-sectional views in order of theprocesses, illustrating a method for manufacturing the semiconductorlight emitting device according to the first embodiment;

FIG. 5A to FIG. 5C are schematic cross-sectional views illustrating theconfiguration of other semiconductor light emitting devices according tothe first embodiment;

FIG. 6A to FIG. 6C are schematic cross-sectional views illustrating theconfiguration of other semiconductor light emitting devices according tothe first embodiment;

FIG. 7A and FIG. 7B are schematic views illustrating the configurationof a semiconductor light emitting device according to a secondembodiment;

FIG. 8A to FIG. 8C are schematic plan views illustrating theconfiguration of other semiconductor light emitting devices according tothe second embodiment;

FIG. 9A to FIG. 9C are schematic plan views illustrating theconfiguration of other semiconductor light emitting devices according tothe second embodiment;

FIG. 10 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to athird embodiment;

FIG. 11 is a schematic cross-sectional view illustrating theconfiguration of another semiconductor light emitting device accordingto the third embodiment;

FIG. 12 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to afourth embodiment;

FIG. 13 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to afifth embodiment;

FIG. 14A and FIG. 14B are schematic views illustrating the configurationof a semiconductor light emitting device according to a sixthembodiment; and

FIG. 15 is a flowchart illustrating a method for manufacturing asemiconductor light emitting device according to a seventh embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor light emittingdevice includes a light emitting unit, a first conductive member, aninsulating layer, a second conductive member, a sealing member, and anoptical layer. The light emitting unit includes a semiconductor stackedbody, a first electrode, and a second electrode. The semiconductorstacked body includes a first semiconductor layer of a firstconductivity type, a second semiconductor layer of a second conductivitytype, and a light emitting layer provided between the firstsemiconductor layer and the second semiconductor layer. Thesemiconductor stacked body has a first major surface on a firstsemiconductor layer side and a second major surface on a secondsemiconductor layer side. The first electrode is electrically connectedto the first semiconductor layer on a second major surface side. Thesecond electrode is electrically connected to the second semiconductorlayer on the second major surface side. The first conductive member iselectrically connected to the first electrode and includes a firstcolumnar portion provided on the second major surface to cover a portionof the second semiconductor layer on the second major surface side. Thefirst columnar portion is separate from the second semiconductor layer.The insulating layer is provided between the first columnar portion andthe portion of the second semiconductor layer on the second majorsurface side. The second conductive member is electrically connected tothe second electrode and includes a second columnar portion provided onthe second major surface. The sealing member covers a side surface ofthe first conductive member and a side surface of the second conductivemember. The optical layer is provided on the first major surface of thesemiconductor stacked body and includes a wavelength conversion unitconfigured to absorb an emitted light emitted from the light emittinglayer and emit light having a wavelength different from a wavelength ofthe emitted light.

According to another embodiment, a method is disclosed for manufacturinga semiconductor light emitting device. The semiconductor light emittingdevice includes a light emitting unit, a first conductive member, aninsulating layer, a second conductive member, a sealing member, and anoptical layer. The light emitting unit includes a semiconductor stackedbody, a first electrode, and a second electrode. The semiconductorstacked body includes a first semiconductor layer of a firstconductivity type, a second semiconductor layer of a second conductivitytype, and a light emitting layer provided between the firstsemiconductor layer and the second semiconductor layer. Thesemiconductor stacked body has a first major surface on a firstsemiconductor layer side and a second major surface on a secondsemiconductor layer side. The first electrode is electrically connectedto the first semiconductor layer on a second major surface side. Thesecond electrode is electrically connected to the second semiconductorlayer on the second major surface side. The first conductive member iselectrically connected to the first electrode. The first conductivemember includes a first columnar portion provided on the second majorsurface to cover a portion of the second semiconductor layer on thesecond major surface side. The first columnar portion is separate fromthe second semiconductor layer. The insulating layer is provided betweenthe first columnar portion and the portion of the second semiconductorlayer on the second major surface side. The second conductive member iselectrically connected to the second electrode and includes a secondcolumnar portion provided on the second major surface. The sealingmember covers a side surface of the first conductive member and a sidesurface of the second conductive member. The optical layer is providedon the first major surface of the semiconductor stacked body andincludes a wavelength conversion unit configured to absorb an emittedlight emitted from the light emitting layer and emit light having awavelength different from a wavelength of the emitted light. The methodcan include forming the insulating layer to cover the portion of thesecond semiconductor layer on the second major surface side. Inaddition, the method can include forming a conductive film on theinsulating layer covering the portion of the second semiconductor layeron the second major surface side. The conductive film is used to form atleast a portion of the first conductive member.

Embodiments of the invention will now be described with reference to thedrawings.

The drawings are schematic or conceptual; and the relationships betweenthe thicknesses and widths of portions, the proportions of sizes amongportions, etc., are not necessarily the same as the actual valuesthereof. Further, the dimensions and the proportions may be illustrateddifferently among the drawings, even for identical portions.

In the specification and the drawings of the application, componentssimilar to those described in regard to a drawing thereinabove aremarked with like reference numerals, and a detailed description isomitted as appropriate.

First Embodiment

FIG. 1A and FIG. 1B are schematic views illustrating the configurationof a semiconductor light emitting device according to a firstembodiment.

Namely, FIG. 1B is a schematic plan view; and FIG. 1A is across-sectional view along line A-A′ of FIG. 1B.

As illustrated in FIG. 1A and FIG. 1B, the semiconductor light emittingdevice 110 according to this embodiment includes a light emitting unit10 d, a first conductive member 30 a, a second conductive member 30 b,an insulating layer 20, a sealing member 50, and an optical layer 60.

The light emitting unit 10 d includes a semiconductor stacked body 10, afirst electrode 14, and a second electrode 15.

The semiconductor stacked body 10 includes a first semiconductor layer11 of a first conductivity type, a second semiconductor layer 12 of asecond conductivity type, and a light emitting layer 13 provided betweenthe first semiconductor layer 11 and the second semiconductor layer 12.

In the semiconductor stacked body 10, a portion of the firstsemiconductor layer 11 at a second major surface 10 a on the secondsemiconductor layer 12 side is exposed by the second semiconductor layer12 and the light emitting layer 13 being selectively removed.

In other words, the semiconductor stacked body 10 includes a first majorsurface 10 b and the second major surface 10 a on the side opposite tothe first major surface 10 b. The second semiconductor layer 12 isdisposed on the second major surface 10 a side; and the firstsemiconductor layer 11 is disposed on the first major surface 10 b side.The surface areas of the second semiconductor layer 12 and the lightemitting layer 13 are smaller than the surface area of the firstsemiconductor layer 11; and a portion of the first semiconductor layer11 on the second major surface 10 a side is not covered with the secondsemiconductor layer 12 and the light emitting layer 13.

The first conductivity type is, for example, an n type; and the secondconductivity type is, for example, a p type. However, the embodiment isnot limited thereto. The first conductivity type may be the p type; andthe second conductivity type may be the n type. Hereinbelow, the case isdescribed where the first conductivity type is the n type and the secondconductivity type is the p type. In other words, the first semiconductorlayer 11 is an n-type semiconductor layer. The second semiconductorlayer 12 is a p-type semiconductor layer.

The first semiconductor layer 11, the second semiconductor layer 12, andthe light emitting layer 13 may include, for example, a nitridesemiconductor. The first semiconductor layer 11 is, for example, ann-type clad layer including GaN. The second semiconductor layer 12 is,for example, a p-type clad layer. The light emitting layer 13 includes,for example, a quantum well layer and a barrier layer stacked with thequantum well layer. The light emitting layer 13 may include, forexample, a single quantum well structure or a multiple quantum wellstructure.

Herein, a direction from the second major surface 10 a toward the firstmajor surface 10 b is taken as a Z-axis direction. In other words, theZ-axis direction is the stacking direction of the first semiconductorlayer 11, the light emitting layer 13, and the second semiconductorlayer 12. One direction perpendicular to the Z-axis direction is takenas an X-axis direction. A direction perpendicular to the Z-axisdirection and the X-axis direction is taken as a Y-axis direction.

The semiconductor stacked body 10 is formed by, for example,sequentially growing a crystal used to form the first semiconductorlayer 11, a crystal used to form the light emitting layer 13, and acrystal used to form the second semiconductor layer 12 on a substratesuch as sapphire and subsequently removing a portion of the firstsemiconductor layer 11, the light emitting layer 13, and the secondsemiconductor layer 12 in a prescribed region.

The first electrode 14 is electrically connected to the firstsemiconductor layer 11 on the second major surface 10 a side. The secondelectrode 15 is electrically connected to the second semiconductor layer12 on the second major surface 10 a side. The first electrode 14 is, forexample, an n-side electrode; and the second electrode 15 is, forexample, a p-side electrode. Light (an emitted light) is emitted fromthe light emitting layer 13 of the light emitting unit 10 d by supplyinga current to the semiconductor stacked body 10 via the first electrode14 and the second electrode 15.

Thus, the light emitting unit 10 d includes the first major surface 10b, the second major surface 10 a on the side opposite to the first majorsurface 10 b, and the first electrode 14 and the second electrode 15provided on the second major surface 10 a.

The first conductive member 30 a is electrically connected to the firstelectrode 14. The first conductive member 30 a includes a first columnarportion 31 a. The first columnar portion 31 a is provided on the secondmajor surface 10 a to cover a portion (a certain portion 12 p) of thesecond semiconductor layer 12 on the second major surface 10 a sidewhile being separate from the second semiconductor layer 12. The firstcolumnar portion 31 a includes at least a portion extending along, forexample, the Z-axis direction.

The insulating layer 20 is provided between the first columnar portion31 a and the certain portion 12 p of the second semiconductor layer 12on the second major surface 10 a side recited above. The secondsemiconductor layer 12 and the first columnar portion 31 a areelectrically cut off from each other by the insulating layer 20.

The insulating layer 20 is not provided on at least a portion of thefirst electrode 14 to realize the electrical connection between thefirst conductive member 30 a and the first electrode 14. The insulatinglayer 20 has, for example, a first opening 20 o 1; and the electricalconnection between the first conductive member 30 a and the firstelectrode 14 is performed in the first opening 20 o 1. The first opening20 o 1 may include a hole piercing the insulating layer 20. However, theembodiment is not limited thereto. For convenience, the first opening 20o 1 may include the case where the end portion of the insulating layer20 includes a portion receded from the end portion of the firstelectrode 14 to expose the first electrode 14. In other words, the firstopening 20 o 1 may include the case where a portion of the insulatinglayer 20 leaves at least a portion of the first electrode 14 exposed;and the configuration thereof is arbitrary. The number of the firstopenings 20 o 1 is arbitrary.

The second conductive member 30 b is electrically connected to thesecond electrode 15. The second conductive member 30 b includes a secondcolumnar portion 31 b provided on the second major surface 10 a. Thesecond columnar portion 31 b includes at least a portion extending alongthe Z-axis direction.

In this specific example, the direction of the side of the semiconductorstacked body 10 along the direction from the first columnar portion 31 atoward the second columnar portion 31 b is set to be in the X-axisdirection.

The insulating layer 20 also leaves at least a portion of the secondelectrode 15 exposed. Thereby, the electrical connection between thesecond conductive member 30 b and the second electrode 15 is performed.In other words, the insulating layer 20 has, for example, a secondopening 20 o 2 on the second electrode 15 side; and the electricalconnection between the second conductive member 30 b and the secondelectrode 15 is performed in the second opening 20 o 2. In such a caseas well, the second opening 20 o 2 includes a hole piercing theinsulating layer 20. Also, for convenience, the second opening 20 o 2may include a portion receded from the end portion of the secondelectrode 15 to expose the second electrode 15. In other words, thesecond opening 20 o 2 may include the case where a portion of theinsulating layer 20 leaves at least a portion of the second electrode 15exposed; and the configuration thereof is arbitrary. The number of thesecond openings 20 o 2 is arbitrary.

The sealing member 50 covers the side surface of the first conductivemember 30 a and the side surface of the second conductive member 30 b.In other words, the sealing member 50 covers the side surface of thefirst columnar portion 31 a and the side surface of the second columnarportion 31 b. The sealing member 50 leaves exposed a first end surface31 ae on the side of the first conductive member 30 a opposite to thesemiconductor stacked body 10. The sealing member 50 also leaves exposeda second end surface 31 be on the side of the second conductive member30 b opposite to the semiconductor stacked body 10. The first endsurface 31 ae is the end surface on the side of the first columnarportion 31 a opposite to the semiconductor stacked body 10. The secondend surface 31 be is the end surface on the side of the second columnarportion 31 b opposite to the semiconductor stacked body 10.

The optical layer 60 is provided on the first major surface 10 b on theside of the semiconductor stacked body 10 opposite to the second majorsurface 10 a. The optical layer 60 includes a fluorescer layer 61 (awavelength conversion unit). The fluorescer layer 61 is configured toabsorb emitted light emitted from the light emitting layer 13 and emitlight having a wavelength different from the wavelength of the emittedlight.

In this specific example, the optical layer 60 includes, for example,the fluorescer layer 61 including a fluorescer and a transparent member62 provided between the fluorescer layer 61 and the semiconductorstacked body 10. The transparent member 62 is transparent to the emittedlight emitted from the light emitting layer 13. The transparent member62 may have an effect of changing the propagation direction of the lightsuch as, for example, a lens effect and/or a refraction effect. Thereby,the irradiation angle and the color shift of the light produced by thelight emitting layer 13 can be adjusted. The transparent member 62 maybe provided if necessary; and the transparent member 62 can be omittedin some cases.

The fluorescer layer 61 includes, for example, a transparent resin and afluorescer dispersed in the resin. The fluorescer is configured toabsorb the emitted light emitted from the light emitting layer 13 andemit light having a wavelength different from the wavelength of theemitted light. The fluorescer layer 61 may include multiple types offluorescers. The fluorescer may include a fluorescer configured to emitany color such as, for example, a fluorescer configured to emit yellowlight, a fluorescer configured to emit green light, and a fluorescerconfigured to emit red light. The fluorescer layer 61 also may includemultiple stacked layers including fluorescers of different wavelengths.

In the semiconductor light emitting device 110, a current is supplied tothe semiconductor stacked body 10 via the first conductive member 30 a,the first electrode 14, the second conductive member 30 b, and thesecond electrode 15. Thereby, the light (the emitted light) is emittedfrom the light emitting layer 13. The emitted light may be light havinga relatively short wavelength such as, for example, blue light, violetlight, and ultraviolet light.

For example, blue light emitted from the light emitting layer 13propagates through the interior of the optical layer 60; and itswavelength is converted into, for example, yellow light by thefluorescer layer 61. Then, for example, the blue emitted light emittedfrom the light emitting layer 13 synthesizes with, for example, theyellow light obtained in the fluorescer layer 61. Thereby, thesemiconductor light emitting device 110 can emit white light.

The wavelength of the emitted light emitted from the light emittinglayer 13 and the wavelength of the light converted in the fluorescerlayer 61 are arbitrary. Other than white, the color of the light emittedfrom the semiconductor light emitting device 110 may be any color.

In this specific example, the light emitting unit 10 d further includesa protective layer 18 provided on a portion of the semiconductor stackedbody 10 on the second major surface 10 a side excluding the firstelectrode 14 and the second electrode 15. The protective layer 18 coversthe end portion of the semiconductor stacked body 10. The protectivelayer 18 may include an insulating material. Thereby, the insulativeproperty between, for example, the first electrode 14 and the secondelectrode 15 improves. The protective layer 18 also may cover the entireend portion of the semiconductor stacked body 10. The protective layer18 also may cover a portion of the end portion of the semiconductorstacked body 10. The protective layer 18 may include, for example,silicon oxide, etc. However, the embodiment is not limited thereto. Theprotective layer 18 may include any insulating material. The protectivelayer 18 may be provided if necessary and may be omitted in some cases.

The second electrode 15 may have a stacked structure. For example, thesecond electrode 15 may include a conductive layer and a reflectivelayer (not illustrated) provided between the conductive layer and thesecond semiconductor layer 12. Thereby, the light that is emitted fromthe light emitting layer 13 and propagates to the second major surface10 a side is reflected by the reflective layer; and light canefficiently propagate to the optical layer 60 side.

In this specific example, the first conductive member 30 a furtherincludes a first connection portion 32 a. The first connection portion32 a covers at least a portion of the insulating layer 20 andelectrically connects the first electrode 14 to the first columnarportion 31 a. The first connection portion 32 a may include, forexample, a portion extending along the X-Y plane.

The second conductive member 30 b may further include a secondconnection portion 32 b. The second connection portion 32 b electricallyconnects the second electrode 15 to the second columnar portion 31 b.The second connection portion 32 b may include, for example, a portionextending along the X-Y plane.

The first columnar portion 31 a, the first connection portion 32 a, thesecond columnar portion 31 b, and the second connection portion 32 b mayinclude a metal such as, for example, Cu (copper), Ni (nickel), Al(aluminum), etc. However, the embodiment is not limited thereto. Thefirst columnar portion 31 a, the first connection portion 32 a, thesecond columnar portion 31 b, and the second connection portion 32 b mayinclude any material.

The sealing member 50 covers the side surface of the first connectionportion 32 a, the side surface of the first columnar portion 31 a, theside surface of the second connection portion 32 b, and the side surfaceof the second columnar portion 31 b. The sealing member 50 may include aresin such as, for example, an epoxy resin. The resin of the sealingmember 50 may contain a filler such as, for example, a quartz filler, analumina filler, etc. Thereby, the thermal conductivity of the sealingmember 50 can be increased. Thereby, the heat dissipation can beimproved; the temperature increase of the semiconductor stacked body canbe suppressed; and the luminous efficiency can be increased.

The insulating layer 20 provided between the first columnar portion 31 aand the certain portion 12 p of the second semiconductor layer 12 on thesecond major surface 10 a side recited above may include a resin suchas, for example, polyimide.

In the semiconductor light emitting device 110, a configuration isemployed in which the first columnar portion 31 a of the firstconductive member 30 a covers a portion of the second semiconductorlayer 12 with the insulating layer 20 interposed. Thereby, the surfacearea of the end surface (the first end surface 31 ae) on the side of thefirst columnar portion 31 a opposite to the semiconductor stacked body10 is set to be greater than the surface area of the first electrode 14.

To obtain a high heat dissipation and a high luminous efficiency in thelight emitting unit 10 d, the surface area of one of the two electrodesprovided in the semiconductor stacked body 10 is set to be large; andthe other is set to be small. In this specific example, the surface areaof the first electrode 14 connected to the first semiconductor layer 11of the n-type semiconductor (the surface area of the first electrode 14as viewed from the Z-axis direction) is set to be smaller than thesurface area of the second electrode 15 connected to the secondsemiconductor layer 12 of the p-type semiconductor (the surface area ofthe second electrode 15 as viewed from the Z-axis direction).

On the other hand, the electrical connection between the outside of thesemiconductor light emitting device 110 and the semiconductor lightemitting device 110 is performed via the first conductive member 30 aand the second conductive member 30 b.

Therefore, to obtain good connectability in the semiconductor lightemitting device 110, it is desirable for the surface area of the firstend surface 31 ae of the first conductive member 30 a exposed from thesealing member 50 and the surface area of the second end surface 31 beof the second conductive member 30 b exposed from the sealing member 50to be as large as possible. Also, it is desirable for the spacingbetween the first end surface 31 ae and the second end surface 31 be tobe set to be wide with a length (e.g., the length of the side along theX-axis direction) of about, for example, the length of the side of thefirst end surface 31 ae.

In the case where the semiconductor light emitting device 110 isdownsized and the exterior form thereof (in particular, the surface areaof the surface parallel to the X-Y plane) is reduced, it is important tomaintain good connectability.

For example, in a comparative example in which the surface area of thefirst electrode 14 connected to the first semiconductor layer 11 of then-type semiconductor is set to be smaller than the surface area of thesecond electrode 15 connected to the second semiconductor layer 12 ofthe p-type semiconductor and the surface area of the first end surface31 ae of the first conductive member 30 a connected to the firstelectrode 14 is as small as the surface area of the first electrode 14,there are cases where the connectability degrades. Therefore, connectiondefects occur easily. Easy degradation of the connectability impedes thedownsizing of the semiconductor light emitting device 110.

In the semiconductor light emitting device 110 according to thisembodiment, the first columnar portion 31 a of the first conductivemember 30 a connected to the first electrode 14 for the firstsemiconductor layer 11 covers the certain portion 12 p of the secondsemiconductor layer 12 on the second major surface 10 a side while beingseparate from the second semiconductor layer 12. Thereby, thecross-sectional area (the cross-sectional area when cut by the X-Yplane) of the first columnar portion 31 a can be greater than thesurface area of the first electrode 14. Then, the first columnar portion31 a and the second semiconductor layer 12 are electrically cut off fromeach other by the insulating layer 20 provided between the firstcolumnar portion 31 a and the certain portion 12 p of the secondsemiconductor layer 12 on the second major surface 10 a side. Byemploying such a configuration, even in the case where the surface areaof the first electrode 14 is small, the surface area of the first endsurface 31 ae of the first columnar portion 31 a (the first conductivemember 30 a) connected to the first electrode 14 can be large and goodconnectability can be realized.

Thus, according to the semiconductor light emitting device 110 accordingto this embodiment, high electrode connectability can be maintained; anda semiconductor light emitting device suited to downsizing can beprovided.

The effects of such a configuration are realized particularlyeffectively in the case where the semiconductor light emitting device110 is downsized and the exterior form thereof (in particular, thesurface parallel to the X-Y plane) is reduced. These are realizedparticularly effectively in the case where the surface area of the firstelectrode 14 is less than the surface area of the second electrode 15.

In the case where the semiconductor light emitting device 110 ismounted, for example, on a printed wiring board, it is desirable for thespacing between the first end surface 31 ae and the second end surface31 be to be, for example, not less than 200 micrometers (μm) due to theprecision of the wiring technology of printed wiring boards for massproduction. However, the embodiment is not limited thereto. The spacingbetween the first end surface 31 ae and the second end surface 31 be isarbitrary.

It is desirable for the distance from the side surface of the firstconductive member 30 a to the exterior surface of the semiconductorlight emitting device 110 and the distance from the side surface of thesecond conductive member 30 b to the exterior surface of thesemiconductor light emitting device 110 to be, for example, not lessthan the diameter of the filler included in the resin of the sealingmember 50. For example, it is desirable for the distance from the firstend surface 31 ae to the exterior surface (the surface along the Z-axisdirection) of the semiconductor light emitting device 110 and thedistance from the second end surface 31 be to the exterior surface (thesurface along the Z-axis direction) of the semiconductor light emittingdevice 110 to be not less than, for example, 50 μm for a generalthermosetting resin. However, the embodiment is not limited thereto. Thedistance from the first end surface 31 ae to the exterior surface of thesemiconductor light emitting device 110 and the distance from the secondend surface 31 be to the exterior surface of the semiconductor lightemitting device 110 are arbitrary.

The size of the surface of the semiconductor light emitting device 110parallel to the X-Y plane can be the minimum size of a bottom surfaceelectrode-type electronic part. For example, the surface of thesemiconductor light emitting device 110 parallel to the X-Y plane may bea 600 μm by 300 μm rectangle. For example, the exterior form of thesemiconductor light emitting device 110 may be a 600 μm by 300 μm by 300μm rectangular parallelepiped. Also, the surface of the semiconductorlight emitting device 110 parallel to the X-Y plane may be a 1000 μm by500 μm rectangle. For example, the exterior form of the semiconductorlight emitting device 110 may be a 1000 μm by 500 μm by 500 μmrectangular parallelepiped. However, the embodiment is not limitedthereto. The size and the configuration of the surface of thesemiconductor light emitting device 110 parallel to the X-Y plane andthe size and the configuration of the semiconductor light emittingdevice 110 are arbitrary.

In the semiconductor light emitting device 110 according to thisembodiment, the cross-sectional area (the cross-sectional area when cutby the X-Y plane) of the first conductive member 30 a (e.g., the firstcolumnar portion 31 a) and the second conductive member 30 b (e.g., thesecond columnar portion 31 b) may be increased. In other words, thecross sections of the first conductive member 30 a and the secondconductive member 30 b, which are the heat dissipation path of the heatof the light emitting unit 10 d, may be increased. By using, forexample, a metal having a high thermal conductivity as the firstconductive member 30 a (e.g., the first columnar portion 31 a) and thesecond conductive member 30 b (e.g., the second columnar portion 31 b),the thermal resistance of the heat dissipation path of the heatgenerated in the semiconductor stacked body 10 is reduced; and the heatdissipation is improved.

The electrical connection between the semiconductor light emittingdevice 110 and, for example, a printed wiring board connected to thesemiconductor light emitting device 110 may be performed by connectingthe first end surface 31 ae of the first conductive member 30 a to anelectrode of the printed wiring board and by connecting the second endsurface 31 be of the second conductive member 30 b to an electrode ofthe printed wiring board using, for example, a solder material. Thethermal conductivity of the solder material is small, e.g., about 1/7 ofthe thermal conductivity of the copper of the first conductive member 30a and the second conductive member 30 b. Therefore, to improve the heatdissipation, it is effective to increase the cross-sectional area of thesolder bond portion.

In the semiconductor light emitting device 110 according to thisembodiment, the cross-sectional area of the solder bond portion can beincreased because the surface area of the first end surface 31 ae of thefirst conductive member 30 a and the surface area of the second endsurface 31 be of the second conductive member 30 b can be increased.Therefore, the heat dissipation can be improved by the configuration ofthe semiconductor light emitting device 110.

The thickness of the semiconductor stacked body 10 is thin, e.g., notless than about 5 μm and not more than about 6 μm; and the thermalconductivity of the semiconductor stacked body 10 is lower than that ofmetal. Therefore, a portion of the heat generated at the light emittinglayer 13 is conducted in the direction along the X-Y plane through thesemiconductor stacked body 10; heat easily accumulates in thesemiconductor stacked body 10; and the temperature in the light emittinglayer 13 easily increases.

At this time, in the semiconductor light emitting device 110 accordingto this embodiment, the heat generated in the semiconductor stacked body10 can be conducted efficiently in the Z-axis direction and the X-Yplanar direction and the temperature increase of the light emittinglayer 13 can be suppressed by providing the second conductive member 30b, which has a high thermal conductivity, at a position opposing thelight emitting layer 13 (i.e., a position opposing the secondsemiconductor layer 12). Further, the temperature of the light emittinglayer 13 can be more uniform.

The heat dissipation effects increase as the cross-sectional area of theheat conduction path of the first conductive member 30 a and the secondconductive member 30 b increases. For example, the heat dissipationeffects increase as the cross-sectional area of the first columnarportion 31 a (the cross-sectional area when the first columnar portion31 a is cut by the X-Y plane) and the cross-sectional area of the secondcolumnar portion 31 b (the cross-sectional area when the second columnarportion 31 b is cut by the X-Y plane) increase. In the case where thefirst connection portion 32 a and the second connection portion 32 b areprovided, the heat dissipation effects increase as the thicknesses ofthe first connection portion 32 a and the second connection portion 32 b(the thicknesses along the Z-axis direction) increase.

Thus, according to the semiconductor light emitting device 110 accordingto this embodiment, the heat dissipation can be improved further; theluminous efficiency can be increased more; and the reliability can beincreased more.

An example of the configuration of the semiconductor light emittingdevice 110 will now be described further.

The length of the side of the semiconductor light emitting device 110along the X-axis direction may be, for example, 600 μm. The length ofthe side of the semiconductor light emitting device 110 along the Y-axisdirection may be, for example, 300 μm. An example of a configurationwill now be described for the case where the length of the side of thesemiconductor light emitting device 110 along the X-axis direction is600 μm and the length of the side along the Y-axis direction is 300 μm.The length of the side of the first semiconductor layer 11 along theX-axis direction may be, for example, 570 μm. The length of the side ofthe first semiconductor layer 11 along the Y-axis direction may be, forexample, 270 μm.

The X-axis direction is taken to be the direction of the side of thesemiconductor stacked body 10 along the direction from the firstcolumnar portion 31 a toward the second columnar portion 31 b.

The length of the semiconductor light emitting device 110 along theX-axis direction (the direction from the first columnar portion 31 atoward the second columnar portion 31 b) may be set to be longer thanthe length of the semiconductor light emitting device 110 along theY-axis direction (the direction orthogonal to the direction from thefirst columnar portion 31 a toward the second columnar portion 31 b andthe direction from the second major surface 10 a toward the first majorsurface 10 b).

The length of the first semiconductor layer 11 along the X-axisdirection may be set to be longer than the length of the firstsemiconductor layer 11 along the Y-axis direction.

Thereby, the size of the first end surface 31 ae and the size of thesecond end surface 31 be can be set to be large in the case where thefirst end surface 31 ae and the second end surface 31 be are disposedalong the X-axis direction. Thereby, the connectability of theelectrodes can be increased further.

The fluorescer layer 61 may include a resin into which, for example, afluorescer particle configured to absorb light and emit light having awavelength longer than the wavelength of the absorbed light is mixed.For example, the fluorescer is configured to absorb at least one lightselected from blue light, violet light, and ultraviolet light and emitlight having a wavelength longer than such light. The resin into whichthe fluorescer is mixed may include, for example, a silicone resin. Thethickness of the fluorescer layer 61 may be, for example, 200 μm. Thesilicone resin of the fluorescer layer 61 may include, for example,methyl phenyl silicone having a refractive index of about 1.5. However,the embodiment is not limited thereto. The resin and the fluorescerincluded in the fluorescer layer 61 are arbitrary.

As described above, the second electrode 15 may include a conductivelayer and a reflective layer provided between the conductive layer andthe second semiconductor layer 12. The reflective layer may contain atleast one selected from, for example, Ag and Al. The thickness of thereflective layer may be, for example, 0.3 μm. The reflective layer maybe provided in the region of substantially the entire secondsemiconductor layer 12 on the second major surface 10 a side. Thereby,the emitted light emitted from the light emitting layer 13 can bereflected efficiently toward the first major surface 10 b. However, theregion where the reflective layer is provided is arbitrary. For example,the reflective layer may be provided in the region of a portion of thesecond semiconductor layer 12 on the second major surface 10 a side.

The second electrode 15 may further include a contact electrode layerprovided between the reflective layer recited above and the secondsemiconductor layer 12. The contact electrode layer may include, forexample, a Au layer (a gold layer) and a Ni layer (a nickel layer)provided between the Au layer and the second semiconductor layer 12. Thethickness of the Ni layer may be 0.1 μm; and the thickness of the Aulayer may be 0.1 μm.

The first electrode 14 may include, for example, a Au layer and a Nilayer provided between the Au layer and the first semiconductor layer11. The thickness of the Au layer may be, for example, 0.1 μm; and thethickness of the Ni layer may be 0.1 μm. The first electrode 14 may beprovided, for example, in the region of substantially the entire firstsemiconductor layer 11 on the second major surface 10 a side. However,the region where the first electrode 14 is provided is arbitrary. Thefirst electrode 14 is provided in at least a portion of the firstsemiconductor layer 11 on the second major surface 10 a side.

The first electrode 14 may include a conductive layer and a reflectivelayer provided between the conductive layer and the first semiconductorlayer 11. Thus, the first electrode 14 may have a stacked structure.

The conductive layer of the second electrode 15 may include, forexample, a Au layer and a Ni layer provided between the Au layer and thesecond semiconductor layer 12. The thickness of the Au layer may be, forexample, 0.1 μm; and the thickness of the Ni layer may be 0.1 μm. Thesecond electrode 15 can be provided in, for example, the region ofsubstantially the entire second semiconductor layer 12 on the secondmajor surface 10 a side. However, the region where the second electrode15 is provided is arbitrary. The second electrode 15 is provided in atleast a portion of the second semiconductor layer 12 on the second majorsurface 10 a side.

The first connection portion 32 a included in the first conductivemember 30 a may include a metal such as, for example, Cu. The firstconnection portion 32 a may include a first layer and a second layer.The first layer is provided between the second layer and the firstelectrode 14. In other words, the first layer contacts the firstelectrode 14. The first layer is, for example, a seed layer; and thesecond layer is, for example, a plating layer. The surface area of thefirst layer may be equivalent to the surface area of the first electrode14 or less than the surface area of the first electrode 14. The surfacearea of the second layer may be, for example, 250 μm by 150 μm. Thethickness of the first layer may be, for example, about 1 μm. Thethickness of the second layer may be, for example, 10 μm.

The second connection portion 32 b included in the second conductivemember 30 b may include a metal such as, for example, Cu. The secondconnection portion 32 b may include a third layer and a fourth layer.The third layer is provided between the fourth layer and the secondelectrode 15. In other words, the third layer contacts the secondelectrode 15. The third layer is, for example, a seed layer; and thefourth layer is, for example, a plating layer. The third layer is in thesame layer as the first layer; and the material of the third layer maybe the same as the material of the first layer. The fourth layer is inthe same layer as the second layer; and the material of the fourth layermay be the same as the material of the second layer. The surface area ofthe third layer may be equivalent to the surface area of the secondelectrode 15 or less than the surface area of the second electrode 15.The surface area of the fourth layer may be, for example, 250 μm by 350μm. The thickness of the third layer may be, for example, about 1 μm.The thickness of the fourth layer may be, for example, 10 μm.

However, the surface area, the configuration, and the thickness of thefirst to fourth layers are arbitrary. The first connection portion 32 aand the second connection portion 32 b may be thin films of singlelayers or may be stacked films as recited above. The first connectionportion 32 a may further include other layers stacked on the first layerand the second layer. The second connection portion 32 b may furtherinclude other layers stacked on the third layer and the fourth layer.

The first columnar portion 31 a may include a metal such as, forexample, Cu. The cross section of the first columnar portion 31 a whencut by the X-Y plane may be, for example, a 200 μm by 150 μm rectangle.The thickness (the length along the Z-axis direction) of the firstcolumnar portion 31 a may be about, for example, 60 μm. The firstelectrode 14 is electrically connected to the first columnar portion 31a by the first connection portion 32 a.

The second columnar portion 31 b may include a metal such as, forexample, Cu. The cross section of the second columnar portion 31 b whencut by the X-Y plane may be, for example, a 200 μm by 150 μm rectangle.The thickness (the length along the Z-axis direction) of the secondcolumnar portion 31 b may be about, for example, 60 μm. The secondelectrode 15 is electrically connected to the second columnar portion 31b by the second connection portion 32 b.

The material, the configuration of the cross section, thecross-sectional area, and the thickness of the first columnar portion 31a and the second columnar portion 31 b are not limited to those recitedabove and are arbitrary.

The sealing member 50 may include, for example, a thermosetting resin.The thickness of the sealing member 50 is about the same as thethicknesses of the first columnar portion 31 a and the second columnarportion 31 b, e.g., about 60 μm. The sealing member 50 covers the sidesurface of the first conductive member 30 a (the side surface of thefirst columnar portion 31 a and the side surface of the first connectionportion 32 a) and the side surface of the second conductive member 30 b(the side surface of the second columnar portion 31 b and the sidesurface of the second connection portion 32 b) while leaving the firstend surface 31 ae of the first conductive member 30 a and the second endsurface 31 be of the second conductive member 30 b exposed. The sealingmember 50 also may cover the surfaces of the first connection portion 32a and the second connection portion 32 b on the side opposite to thesemiconductor stacked body 10. The sealing member 50 may further coverthe entire second major surface 10 a side of the semiconductor stackedbody 10.

As described below, the sealing member 50 may include a first sealinglayer and a second sealing layer. The first sealing layer is providedbetween the second sealing layer and the semiconductor stacked body 10.Thus, the sealing member 50 may have a two-layer structure. The firstsealing layer may include, for example, polyimide. The second sealinglayer may include, for example, an epoxy-based thermosetting resin.

An example of a method for manufacturing the semiconductor lightemitting device 110 will now be described.

FIG. 2A to FIG. 2E, FIG. 3A to FIG. 3E, and FIG. 4A to FIG. 4E areschematic cross-sectional views in order of the processes, illustratingthe method for manufacturing the semiconductor light emitting deviceaccording to the first embodiment.

Namely, these drawings are cross-sectional views corresponding to thecross section along line A-A′ of FIG. 1B.

This manufacturing method is a method of collectively manufacturingmultiple semiconductor light emitting devices 110 at the wafer level.

As illustrated in FIG. 2A, a substrate 10 s is used on which thesemiconductor stacked body 10 is formed. The substrate 10 s may include,for example, a sapphire substrate. The size of the substrate 10 s is,for example, 4 inches in diameter; and the thickness of the substrate 10s is, for example, about 500 μm. The method of forming the semiconductorstacked body 10 is, for example, as follows. Namely, a crystal film usedto form the first semiconductor layer 11, a crystal film used to formthe light emitting layer 13, and a crystal film used to form the secondsemiconductor layer 12, which are nitride semiconductors, areepitaxially grown on the substrate 10 s; these crystal films are etchedusing, for example, RIE (Reactive Ion Etching); and a portion of thefirst semiconductor layer 11 on the second major surface 10 a side isexposed. These crystal films are patterned using, for example, RIE andsingulated to form the multiple semiconductor stacked bodies 10.

Then, as illustrated in FIG. 2B, the first electrode 14 and the secondelectrode 15 are formed by forming a film used to form the firstelectrode 14 and the second electrode 15 on the second major surface 10a of the semiconductor stacked body 10 and by patterning this film intoa prescribed configuration. Then, the protective layer 18 is formed. Theprotective layer 18 is not illustrated in FIG. 2B to avoid complexity.

Specifically, for example, a film used to form a contact electrode layeris formed on the second major surface 10 a of the semiconductor stackedbody 10. Namely, a Ni film is formed with a thickness of 0.1 μm; and aAu film is formed with a thickness of 0.1 μm thereon. Thereby, the filmused to form the contact electrode layer is formed. The formation of theNi film and the Au film may include, for example, sputtering. Further, alayer used to form a reflective layer is formed on the Au film. Namely,a film including at least one selected from Ag and Al is formed as thereflective layer with a thickness of, for example, 0.3 μm. In such acase as well, sputtering may be used. Thereby, the film used to form thereflective layer is formed.

A conductive film used to form the conductive layers of the firstelectrode 14 and the second electrode 15 is formed on the film used toform the reflective layer. Namely, a Ni film of, for example, 0.1 μm isformed on the film used to form the reflective layer; and a Au film isformed thereon with a thickness of 0.1 μm. The formation of the Ni filmand the Au film may include, for example, sputtering.

The film used to form the contact electrode layer, the film used to formthe reflective layer, and the conductive film used to form theconductive layers of the first electrode 14 and the second electrode 15recited above are patterned into a prescribed configuration. Thereby,the first electrode 14 and the second electrode 15 are formed. Thepatterning of each of the films recited above may include any methodsuch as, for example, lift-off. The contact electrode layer, thereflective layer, and the conductive layer of the first electrode 14 mayhave mutually different pattern configurations. The contact electrodelayer, the reflective layer, and the conductive layer of the secondelectrode 15 may have mutually different pattern configurations.

Then, a SiO₂ film used to form the protective layer 18 is formed with athickness of, for example, 0.3 μm using, for example, CVD in a regionexcluding at least a portion of the first electrode 14 and a regionexcluding at least a portion of the second electrode 15; and theprotective layer 18 is formed by patterning using, for example, dryetching or wet etching.

Continuing as illustrated in FIG. 2C, the insulating layer 20 is formedto cover the certain portion 12 p of the second semiconductor layer 12on the second major surface 10 a side. The insulating layer 20 is formedin a region excluding at least a portion of the first electrode 14 and aregion excluding at least a portion of the second electrode 15. In thisspecific example, the insulating layer 20 also is provided between themultiple semiconductor stacked bodies 10.

The insulating layer 20 may include, for example, polyimide and/or PBO(polybenzoxazole). In other words, for example, the insulating layer 20is formed selectively by forming a polyimide film used to form theinsulating layer 20 on the entire surface of the second major surface 10a of the semiconductor stacked body 10, by exposing using, for example,a mask, and by developing. The patterned insulating layer 20 is baked ifnecessary.

Subsequently, a conductive film used to form at least a portion of thefirst conductive member 30 a is formed on the insulating layer 20covering the certain portion 12 p of the second semiconductor layer 12on the second major surface 10 a side. This conductive film also may beused to form at least a portion of the second conductive member 30 b.This conductive film also may be formed to cover at least a portion ofthe first electrode 14 not covered with the insulating layer 20 and atleast a portion of the second electrode 15 not covered with theinsulating layer 20. Specifically, the following processing isperformed.

Namely, as illustrated in FIG. 2D, a seed layer 33 used to form thefirst layer of the first connection portion 32 a and the third layer ofthe second connection portion 32 b is formed, for example, on the entiresurface of the substrate 10 s on the second major surface 10 a side. Theseed layer 33 is formed using, for example, a physical covering methodsuch as vapor deposition, sputtering, etc. The seed layer 33 functionsas the power supply layer of the plating process described below. Theseed layer 33 may include, for example, a stacked film of a Ti film anda Cu film. The adhesion strength between the Cu film and the resists andbetween the Cu film and the pads (the first electrode 14 and the secondelectrode 15) can be increased by the Ti layer of the seed layer 33. Thethickness of the Ti layer may be, for example, about 0.2 μm. On theother hand, the Cu film of the seed layer 33 contributes mainly to thepower supply. It is desirable for the thickness of the Cu film to be notless than 0.2 μm.

Then, as illustrated in FIG. 2E, a first resist layer 37 is formed in aregion other than the region corresponding to the first connectionportion 32 a and the region corresponding to the second connectionportion 32 b. The first resist layer 37 may include, for example, aphotosensitive liquid resist or dry film resist. The first resist layer37 is formed by first forming a film used to form the first resist layer37 and subsequently exposing using a light-shielding mask havingprescribed openings and developing. The first resist layer 37 may bebaked if necessary.

Then, as illustrated in FIG. 3A, a connection portion conductive film 32f used to form the second layer of the first connection portion 32 a andthe fourth layer of the second connection portion 32 b is formed in aregion where the first resist layer 37 is not provided. The connectionportion conductive film 32 f is formed using, for example,electroplating. In the electroplating, for example, the substrate 10 son which the processed body recited above is provided is immersed in aplating liquid made of copper sulfate and sulfuric acid; the seed layer33 is connected to the negative terminal of a direct-current powersource; and a Cu plate used as an anode is disposed opposing the surfaceto be plated of the substrate 10 s and connected to the positiveterminal of the direct-current power source. The plating of the Cu isperformed by providing a current between the negative terminal and thepositive terminal. The thickness of the plating film of the platingprocess increases as time elapses; and the plating is completed bystopping the flow of the current when the thickness of the plating filmreaches the necessary thickness. Thereby, the connection portionconductive film 32 f made of the plating film is formed in the openingsof the first resist layer 37.

The seed layer 33 (the first layer) at the position corresponding to thefirst electrode 14 and the connection portion conductive film 32 f (thesecond layer) at the position corresponding to the first electrode 14are used to form the first connection portion 32 a. The seed layer 33(the third layer) at the position corresponding to the second electrode15 and the connection portion conductive film 32 f (the fourth layer) atthe position corresponding to the second electrode 15 are used to formthe second connection portion 32 b.

The first connection portion 32 a corresponds to the conductive filmused to form at least a portion of the first conductive member 30 aformed on the insulating layer 20 covering the certain portion 12 p ofthe second semiconductor layer 12 on the second major surface 10 a side.In this specific example, the seed layer 33 and the connection portionconductive film 32 f used to form the conductive film also are theconductive film used to form at least a portion of the second conductivemember 30 b. Further, the seed layer 33 and the connection portionconductive film 32 f used to form the conductive film are formed tocover at least a portion of the first electrode 14 not covered with theinsulating layer 20 and at least a portion of the second electrode 15not covered with the insulating layer 20.

Subsequently, the first columnar portion 31 a is formed on the firstconnection portion 32 a (the conductive film used to form at least aportion of the first conductive member 30 a formed on the insulatinglayer 20 covering the certain portion 12 p of the second semiconductorlayer 12 on the second major surface 10 a side). Specifically, forexample, the following processing is performed.

As illustrated in FIG. 3B, a second resist layer 38 is formed in aregion other than the region corresponding to the first columnar portion31 a and the region corresponding to the second columnar portion 31 b.The materials and the methods described in regard to the first resistlayer 37 may be employed for the material of the second resist layer 38and the formation of the second resist layer 38.

Then, as illustrated in FIG. 3C, a columnar portion conductive film 31 fused to form the first columnar portion 31 a and the second columnarportion 31 b is formed in a region where the second resist layer 38 isnot provided. The columnar portion conductive film 31 f also is formedusing, for example, electroplating. The materials and the methodsdescribed in regard to the formation of the connection portionconductive film 32 f may be applied to the formation of the columnarportion conductive film 31 f. The portion of the columnar portionconductive film 31 f connected to the first connection portion 32 a isused to form the first columnar portion 31 a; and the portion of thecolumnar portion conductive film 31 f connected to the second connectionportion 32 b is used to form the second columnar portion 31 b.

Continuing as illustrated in FIG. 3D, the first resist layer 37 and thesecond resist layer 38 are removed. The exposed seed layer 33 is removedusing, for example, acid cleaning. The seed layer 33 covered with theconnection portion conductive film 32 f remains as the first layer andthe third layer which are included in the first connection portion 32 aand the second connection portion 32 b, respectively.

Then, as illustrated in FIG. 3E, a resin layer 50 f used to form thesealing member 50 is formed on the surface of the substrate 10 s on thesecond major surface 10 a side. The resin layer 50 f may include, forexample, a thermosetting resin. The resin layer 50 f is formed by, forexample, forming a film used to form the resin layer 50 f on the surfaceof the substrate 10 s on the second major surface 10 a side with athickness enough to bury the first columnar portion 31 a and the secondcolumnar portion 31 b by a method such as printing and by heating tocure. The heating conditions when curing the resin layer 50 f are, forexample, about 150° C. for about 2 hours.

Continuing as illustrated in FIG. 4A, the first columnar portion 31 aand the second columnar portion 31 b are exposed by polishing the frontsurface of the resin layer 50 f. Thereby, the sealing member 50 isformed. A portion of the first columnar portion 31 a and a portion ofthe second columnar portion 31 b may be polished when polishing theresin layer 50 f. Thereby, the first end surface 31 ae of the firstcolumnar portion 31 a and the second end surface 31 be of the secondcolumnar portion 31 b are disposed in the surface including the surfaceof the sealing member 50 on the side opposite to the second majorsurface 10 a.

A rotating polishing wheel, for example, may be used in the polishingrecited above. By the rotational polishing, the polishing can beimplemented while ensuring the planarity. After the polishing, drying isperformed if necessary.

Then, as illustrated in FIG. 4B, the substrate 10 s is removed from thesemiconductor stacked body 10. In other words, the substrate 10 s isseparated from the semiconductor stacked body 10 by, for example,irradiating laser light from the surface of the substrate 10 s on theside opposite to the semiconductor stacked body 10 through the substrate10 s onto a layer (e.g., a GaN layer) included in the semiconductorstacked body 10 to decompose at least a portion of this layer. The laserlight may include, for example, laser light having a wavelength shorterthan a bandgap wavelength based on the bandgap of GaN. For example, aNd:YAG third harmonic laser may be used. However, the laser light usedis arbitrary.

Continuing as illustrated in FIG. 4C, in this specific example, thetransparent member 62 used to form a portion of the optical layer 60 isformed on the first major surface 10 b of the semiconductor stacked body10. In other words, the transparent member 62 is formed, for example, bycoating a liquid transparent resin layer onto the first major surface 10b of the semiconductor stacked body 10 using printing, etc., deformingthe transparent resin layer into a prescribed configuration by pressinga template including the prescribed configuration onto the transparentresin layer, subsequently releasing the template, and curing ifnecessary by performing at least one processing selected from heatingand ultraviolet irradiation. By employing such methods, the transparentmember 62 can be formed easily in any configuration by using a templatehaving the desired configuration.

Then, as illustrated in FIG. 4D, a fluorescer film 61 f used to form thefluorescer layer 61 is formed to cover the transparent member 62. Thefluorescer film 61 f is formed by, for example, coating a resinmaterial, into which a fluorescer particle and a silicone resin aremixed, using spin coating or printing to cover the transparent member 62and by subsequently thermally curing the resin material. The resinmaterial may include, for example, a material that cures by heating at150° C. for 1 hour.

Continuing as illustrated in FIG. 4E, the resin layer 50 f used to formthe sealing member 50 and the fluorescer film 61 f used to form thefluorescer layer 61 are separated into the multiple semiconductorstacked bodies 10 by cutting. Thereby, the multiple semiconductor lightemitting devices 110 can be collectively manufactured. The cuttingrecited above may include, for example, dicing using a dicer.

In the method for manufacturing recited above, the electrode, thesealing member, and the optical layer can be formed collectively at thewafer level; and the productivity is high. Inspections also are possibleat the wafer level. Thereby, a semiconductor light emitting device canbe manufactured with high productivity. Downsizing is easy becausemembers such as leadframes, conductive substrates, bonding wires, etc.,are unnecessary. Reduced costs also are possible.

In the process of separating the substrate 10 s from the semiconductorstacked body 10 described in regard to FIG. 4B, there are cases wherethe film used to form the insulating layer 20 reaches a hightemperature. In other words, the film used to form the insulating layer20 may be heated when irradiating the laser light from the surface ofthe substrate 10 s on the side opposite to the semiconductor stackedbody 10 through the substrate 10 s onto the semiconductor stacked body10. It is desirable for the film used to form the insulating layer 20 toinclude a material having high heat resistance to suppress thedegradation of the film used to form the insulating layer 20 due to theheating at this time.

For example, it is more desirable for the insulating layer 20 to includea resin having a heat resistance higher than that of the resin of thesealing member 50. In other words, it is more desirable for the thermaldecomposition temperature of the insulating layer 20 to be higher thanthe thermal decomposition temperature of the sealing member 50. Forexample, the insulating layer 20 may include a polyimide having athermal decomposition temperature not less than about 380° C.; and thesealing member 50 may include an epoxy resin having, for example, athermal decomposition temperature not less than about 280° C. and notmore than about 300° C. The temperature at which, for example, theweight is reduced by a constant proportion (e.g., 5 percent) by heatingcan be employed as the thermal decomposition temperature.

The occurrence of defects caused by the filler due to the hightemperature of the film used to form the insulating layer 20 may occurin the case where the film used to form the insulating layer 20 includesa filler. To suppress the occurrence of such defects, it is desirablefor the content ratio of the filler included in the insulating layer 20to be set to be lower than the content ratio of the filler included inthe sealing member 50. For example, the insulating layer 20 may includea polyimide substantially not including a filler.

FIG. 5A to FIG. 5C and FIG. 6A to FIG. 6C are schematic cross-sectionalviews illustrating the configuration of other semiconductor lightemitting devices according to the first embodiment.

Namely, these drawings are cross-sectional views corresponding to thecross section along line A-A′ of FIG. 1B.

In a semiconductor light emitting device 110 a according to thisembodiment as illustrated in FIG. 5A, the transparent member 62 has aconvex lens configuration.

The thickness of the transparent member 62 may be constant. In otherwords, other than having a lens effect, the transparent member 62 alsomay have an effect of suppressing the temperature increase of thesemiconductor stacked body 10. In other words, although a portion of theenergy is absorbed to generate heat during the wavelength conversion ofthe fluorescer layer 61, the fluorescer layer 61 can be distal to thesemiconductor stacked body 10 and the increase of the temperature of thesemiconductor stacked body 10 can be suppressed by providing thetransparent member 62 between the fluorescer layer 61 and thesemiconductor stacked body 10.

Thus, the configuration of the transparent member 62 is arbitrary.

In a semiconductor light emitting device 110 b as illustrated in FIG.5B, the fluorescer layer 61 is provided in the optical layer 60, but thetransparent member 62 is not provided. Thus, the transparent member 62may be provided if necessary.

In a semiconductor light emitting device 110 c according to thisembodiment as illustrated in FIG. 5C, the optical layer 60 includes thefluorescer layer 61 including the fluorescer and a hard film 63 providedon a side of the fluorescer layer 61 opposite to the semiconductorstacked body 10. The hard film 63 has a hardness higher than thehardness of the fluorescer layer 61. The hard film 63 is transparent.The hard film 63 may include, for example, a silicone resin having ahigh hardness. Spin coating or printing, for example, may be employed toform the hard film 63. The hard film 63 may include, for example,silicon nitride, silicon oxide, etc. In such a case, the hard film 63may be formed by a method such as, for example, sputtering. However, thematerial and the formation method of the hard film 63 are arbitrary.

By providing the hard film 63, for example, the handling of thesemiconductor light emitting device 110 c is easier because the lightemitting surface (the surface on the optical layer 60 side) of thesemiconductor light emitting device 110 c can have a high hardness.

For example, in the case where the hardness of the silicone resin of thefluorescer layer 61 is low, there are cases where, for example, it isdifficult to perform the appropriate mounting by closely adhering thefluorescer layer 61 to a collet when picking up the semiconductor lightemitting device with the collet if the fluorescer layer 61 is exposed atthe outermost surface (the surface most distal to the semiconductorstacked body 10) of the optical layer 60. In such a case, good mountingis easier to implement by providing the hard film 63, which has a higherhardness than the fluorescer layer 61, on the fluorescer layer 61.

In other semiconductor light emitting devices 110 d, 110 e, and 110 faccording to this embodiment as illustrated in FIG. 6A, FIG. 6B, andFIG. 6C, the first connection portion 32 a and the second connectionportion 32 b are not provided. In such a case as well, the insulatinglayer 20 is provided between the first columnar portion 31 a and thesecond semiconductor layer 12; and a portion of the first columnarportion 31 a opposes the certain portion 12 p of the secondsemiconductor layer 12 with the insulating layer 20 interposed. Thereby,the surface area of the first end surface 31 ae of the first conductivemember 30 a can be greater than the surface area of the first electrode14. According to semiconductor light emitting devices 110 d, 110 e, and110 f as well, high electrode connectability can be maintained; and asemiconductor light emitting device suited to downsizing can beprovided.

Although the transparent member 62 has a convex lens configuration inthe semiconductor light emitting device 110 d illustrated in FIG. 6A,the configuration of the transparent member 62 may be a concave lensconfiguration as in the semiconductor light emitting device 110. Or, thethickness of the transparent member 62 may be constant.

The semiconductor light emitting device 110 e illustrated in FIG. 6B isan example in which the transparent member 62 is omitted; and thesemiconductor light emitting device 110 f illustrated in FIG. 6C is anexample in which the hard film 63 described in regard to FIG. 5C isprovided.

Second Embodiment

FIG. 7A and FIG. 7B are schematic views illustrating the configurationof a semiconductor light emitting device according to a secondembodiment.

Namely, FIG. 7B is a schematic plan view; and FIG. 7A is across-sectional view along line B-B′ of FIG. 7B.

In the semiconductor light emitting device 120 according to thisembodiment as illustrated in FIG. 7A and FIG. 7B, the first end surface31 ae of the first conductive member 30 a on the side opposite to thesemiconductor stacked body 10 and the second end surface 31 be of thesecond conductive member 30 b on the side opposite to the semiconductorstacked body 10 are asymmetrical. Otherwise, the semiconductor lightemitting device 120 may be similar to the semiconductor light emittingdevice 110, and a description is omitted.

In this specific example, oblique sides tilted with respect to theX-axis direction are provided at two corners of the first end surface 31ae of the first conductive member 30 a on the second conductive member30 b side. On the other hand, oblique sides tilted with respect to theX-axis direction are provided at two corners of the second end surface31 be of the second conductive member 30 b on the side opposite to thefirst conductive member 30 a. In other words, although the configurationof the first end surface 31 ae and the configuration of the second endsurface 31 be are arranged abreast of each other, they have anasymmetrical relationship. In other words, the first end surface 31 aeand the second end surface 31 be do not have line symmetry with respectto an axis parallel to the Y-axis direction.

By such a configuration, the first conductive member 30 a and the secondconductive member 30 b can be discriminated from each other even in thecase where the semiconductor light emitting device 120 is rotated aroundthe Z-axis direction.

According to the semiconductor light emitting device 120, high electrodeconnectability can be maintained; and a semiconductor light emittingdevice suited to downsizing can be provided in which the discriminationof the electrodes, which easily becomes problematic particularly whendownsizing, is easy.

FIG. 8A to FIG. 8C and FIG. 9A to FIG. 9C are schematic plan viewsillustrating the configuration of other semiconductor light emittingdevices according to the second embodiment.

These drawings illustrate the configurations of the first end surface 31ae and the second end surface 31 be when the semiconductor lightemitting device is viewed along the Z-axis direction.

In a semiconductor light emitting device 120 a according to thisembodiment as illustrated in FIG. 8A, the size of the first end surface31 ae is smaller than the size of the second end surface 31 be. Thereby,the first end surface 31 ae and the second end surface 31 be can bediscriminated from each other.

Thus, it is desirable for the end surface of the electrode connected tothe p-type semiconductor layer to be larger than the end surface of theelectrode connected to the n-type semiconductor layer in the case wherethe size of the first end surface 31 ae is different from the size ofthe second end surface 31 be. Because the p-type semiconductor layerreaches high temperatures more easily than the n-type semiconductorlayer, the heat of the p-type semiconductor layer which easily reacheshigh temperatures can be dissipated more easily by employing such aconfiguration.

In a semiconductor light emitting device 120 b as illustrated in FIG.8B, the first end surface 31 ae includes four end surfaces. In otherwords, the first end surface 31 ae includes first to fourth sub endsurfaces 31 ae 1 to 31 ae 4. On the other hand, there is one second endsurface 31 be. Thus, the number of the surfaces included in the firstend surface 31 ae may be different from the number of the surfacesincluded in the second end surface 31 be. Thereby, the first end surface31 ae and the second end surface 31 be can be discriminated from eachother. Although the configuration of the entire first end surface 31 aeincluding the first to fourth sub end surfaces 31 ae 1 to 31 ae 4 andthe configuration of the second end surface 31 be have line symmetry orpoint symmetry in this specific example, the first end surface 31 ae andthe second end surface 31 be are asymmetrical by the number of thesurfaces included in the first end surface 31 ae being different fromthe number of the surfaces included in the second end surface 31 be.

In a semiconductor light emitting device 120 c as illustrated in FIG.8C, there is one first end surface 31 ae. On the other hand, the secondend surface 31 be includes the two surfaces of fifth and sixth sub endsurfaces 31 be 1 and 31 be 2. Thus, in such a case as well, the numberof the surfaces included in the first end surface 31 ae is differentfrom the number of the surfaces included in the second end surface 31be. Thereby, the first end surface 31 ae and the second end surface 31be can be discriminated from each other. In this specific example, theconfiguration of the first end surface 31 ae and the configuration ofthe entire second end surface 31 be including the fifth and sixth subend surfaces 31 be l and 31 be 2 are asymmetrical. In this specificexample, the surface area of the entire second end surface 31 be whichis connected to the second semiconductor layer 12 and includes the fifthand sixth sub end surfaces 31 be 1 and 31 be 2 is set to be greater thanthe surface area of the first end surface 31 ae connected to the firstsemiconductor layer 11.

In a semiconductor light emitting device 120 d as illustrated in FIG.9A, the first end surface 31 ae is circular; and the second end surface31 be is rectangular. Thus, the pattern configuration of the first endsurface 31 ae is different from the pattern configuration of the secondend surface 31 be. Thereby, the first end surface 31 ae and the secondend surface 31 be can be discriminated from each other.

In a semiconductor light emitting device 120 e as illustrated in FIG.9B, the first end surface 31 ae is hexagonal; and the second end surface31 be is quadrilateral. Thus, the pattern configuration of the first endsurface 31 ae is different from the pattern configuration of the secondend surface 31 be. Thereby, the first end surface 31 ae and the secondend surface 31 be can be discriminated from each other. In this specificexample, the first end surface 31 ae has an anisotropic polygonalpattern configuration. Because the pattern configuration is anisotropic,it is also possible to use the pattern configuration to intuitivelyascertain the direction in which the current flows. Thereby, the firstend surface 31 ae and the second end surface 31 be can be discriminatedfrom each other more easily.

In a semiconductor light emitting device 120 f as illustrated in FIG.9C, the disposition of the first end surface 31 ae with respect to theexterior form of the semiconductor light emitting device and thedisposition of the second end surface 31 be with respect to the exteriorform of the semiconductor light emitting device are asymmetrical. Inother words, in this specific example, the distance from a side of thefirst end surface 31 ae to one side of the exterior form is set to beshorter than the distance from a side of the second end surface 31 be toone side of the exterior form. Thus, the first end surface 31 ae and thesecond end surface 31 be can be discriminated from each other by thedisposition of the first end surface 31 ae (e.g., the disposition withrespect to the exterior form of the semiconductor light emitting device)and the disposition of the second end surface 31 be (e.g., thedisposition with respect to the exterior form of the semiconductor lightemitting device) being asymmetrical.

Thus, the first end surface 31 ae and the second end surface 31 be beingasymmetrical includes the case where, for example, the size of the firstend surface 31 ae is different from the size of the second end surface31 be. It also includes the case where, for example, the number of thefirst end surfaces 31 ae is different from the number of the second endsurfaces 31 be. It also includes the case where, for example, thepattern configuration of the first end surface 31 ae is different fromthe pattern configuration of the second end surface 31 be. It alsoincludes the case where, for example, the disposition of the first endsurface 31 ae and the disposition of the second end surface 31 be areasymmetrical.

The configuration recited above in which the first end surface 31 ae andthe second end surface 31 be are asymmetrical can be applied to thesemiconductor light emitting device according to any of the embodimentsdescribed above; and similar effects can be realized.

Third Embodiment

FIG. 10 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to athird embodiment.

Namely, this drawing is a cross-sectional view corresponding to thecross section along line A-A′ of FIG. 1B.

In the semiconductor light emitting device 130 according to thisembodiment as illustrated in FIG. 10, the first conductive member 30 afurther includes a first surface layer 71 a provided on the first endsurface 31 ae of the first conductive member 30 a on the side oppositeto the semiconductor stacked body 10; and the second conductive member30 b further includes a second surface layer 71 b provided on the secondend surface 31 be of the second conductive member 30 b on the sideopposite to the semiconductor stacked body 10. Otherwise, thesemiconductor light emitting device 130 may be similar to thesemiconductor light emitting device 110, and a description is omitted.

The first surface layer 71 a has, for example, a wettability higher thanthe wettability of the material of the first columnar portion 31 a. Thesecond surface layer 71 b has, for example, a wettability higher thanthe wettability of the material of the second columnar portion 31 b. Thefirst surface layer 71 a and the second surface layer 71 b also may havethe function of an oxidation prevention layer.

The first surface layer 71 a and the second surface layer 71 b mayinclude, for example, a layer on which at least one processing selectedfrom water-soluble preflux, electroless Ni/Au plating, and AuSn platingis performed. Thereby, the wettability of the solder with the first endsurface 31 ae of the first conductive member 30 a and the second endsurface 31 be of the second conductive member 30 b can be increased.Thereby, the mountability of the semiconductor light emitting device 130improves.

FIG. 11 is a schematic cross-sectional view illustrating theconfiguration of another semiconductor light emitting device accordingto the third embodiment.

Namely, this drawing is a cross-sectional view corresponding to thecross section along line A-A′ of FIG. 1B.

As illustrated in FIG. 11, the semiconductor light emitting device 131according to this embodiment further includes a first connection member72 a provided on the first end surface 31 ae of the first conductivemember 30 a on the side opposite to the semiconductor stacked body 10and a second connection member 72 b provided on the second end surface31 be of the second conductive member 30 b on the side opposite to thesemiconductor stacked body 10. Otherwise, the semiconductor lightemitting device 131 may be similar to the semiconductor light emittingdevice 110, and a description is omitted.

Although the first conductive member 30 a includes the first surfacelayer 71 a and the second conductive member 30 b includes the secondsurface layer 71 b in this specific example, the first surface layer 71a and the second surface layer 71 b may be provided if necessary and maybe omitted in some cases.

The first connection member 72 a and the second connection member 72 bmay include solder. The mountability of the semiconductor light emittingdevice 131 is improved further by providing the first connection member72 a and the second connection member 72 b in the semiconductor lightemitting device 131.

The first surface layer 71 a, the second surface layer 71 b, the firstconnection member 72 a, and the second connection member 72 b recitedabove may be provided in the semiconductor light emitting deviceaccording to any of the embodiments described above; and similar effectscan be realized.

Fourth Embodiment

FIG. 12 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to afourth embodiment.

Namely, this drawing is a cross-sectional view corresponding to thecross section along line A-A′ of FIG. 1B.

In the semiconductor light emitting device 140 according to thisembodiment as illustrated in FIG. 12, the first columnar portion 31 a ofthe first conductive member 30 a includes a first surface-roughenedportion 31 as provided in the side surface of the first columnar portion31 a. The second columnar portion 31 b of the second conductive member30 b includes a second surface-roughened portion 31 bs provided in theside surface of the second columnar portion 31 b. Otherwise, thesemiconductor light emitting device 140 may be similar to thesemiconductor light emitting device 110, and a description is omitted.

The first surface-roughened portion 31 as and the secondsurface-roughened portion 31 bs can be formed by, for example,performing soft etching on the side surface of the first columnarportion 31 a and the side surface of the second columnar portion 31 bafter removing the first resist layer 37 and the second resist layer 38in the process described in regard to FIG. 3D. A hydrogenperoxide-sulfuric acid-based soft etchant, for example, may be used insuch soft etching.

Also, the first surface-roughened portion 31 as and the secondsurface-roughened portion 31 bs may be formed by, for example,roughening the side surface of the second resist layer 38 in the processdescribed in regard to FIG. 3C and by transferring the unevenness of theroughened side surface of the second resist layer 38 onto the columnarportion conductive film 31 f.

The adhesion between the first columnar portion 31 a and the sealingmember 50 and the adhesion between the second columnar portion 31 b andthe sealing member 50 can be improved and the reliability can beincreased by providing the first surface-roughened portion 31 as in theside surface of the first columnar portion 31 a and the secondsurface-roughened portion 31 bs in the side surface of the secondcolumnar portion 31 b.

The first surface-roughened portion 31 as and the secondsurface-roughened portion 31 bs may be provided in the semiconductorlight emitting device according to any of the embodiments describedabove; and similar effects can be realized.

Fifth Embodiment

FIG. 13 is a schematic cross-sectional view illustrating theconfiguration of a semiconductor light emitting device according to afifth embodiment.

Namely, this drawing is a cross-sectional view corresponding to thecross section along line A-A′ of FIG. 1B.

In the semiconductor light emitting device 150 according to thisembodiment as illustrated in FIG. 13, the sealing member 50 has atwo-layer structure in a region where the semiconductor stacked body 10is not provided.

In other words, the sealing member 50 has a portion including a firstsealing layer 51 and a second sealing layer 52. A distance between thesecond sealing layer 52 and the optical layer 60 is longer than adistance between the first sealing layer 51 and the optical layer 60.The first sealing layer 51 may include a material different from thematerial of the second sealing layer 52.

For example, the first sealing layer 51 may have a heat resistancehigher than the heat resistance of the second sealing layer 52. In otherwords, the thermal decomposition temperature of the first sealing layer51 is higher than the thermal decomposition temperature of the secondsealing layer 52. For example, the first sealing layer 51 may include apolyimide having a thermal decomposition temperature not less than about380° C.; and the second sealing layer 52 may include, for example, anepoxy resin having a thermal decomposition temperature not less thanabout 280° C. and not more than about 300° C.

The content ratio of the filler included in the first sealing layer 51may be set to be lower than the content ratio of the filler included inthe second sealing layer 52. For example, the first sealing layer 51 mayinclude a polyimide that substantially does not include a filler. On theother hand, the second sealing layer 52 may include an epoxy resinincluding a filler.

The first sealing layer 51 may include, for example, the same materialas the insulating layer 20; and the first sealing layer 51 and theinsulating layer 20 can be formed collectively.

As described above, there are cases where portions inside the sealingmember 50 proximal to the semiconductor stacked body 10 reach hightemperatures in regions between the semiconductor stacked bodies 10 inthe process of separating the substrate 10 s from the semiconductorstacked body 10. In other words, the sealing member 50 of the regionsbetween the semiconductor stacked bodies 10 is heated and the portionsof the sealing member 50 proximal to the semiconductor stacked body 10in particular reach high temperatures when irradiating the laser lightfrom the surface of the substrate 10 s on the side opposite to thesemiconductor stacked body 10 through the substrate 10 s onto thesemiconductor stacked body 10. In such a case, the degradation of thecharacteristics of the sealing member 50 due to the heating can besuppressed by the sealing member 50 having a two-layer structure and theheat resistance of the first sealing layer 51 being higher than that ofthe second sealing layer 52.

The occurrence of defects caused by the filler due to the sealing member50 reaching a high temperature can be suppressed by setting the contentratio of the filler included in the first sealing layer 51 to be lowerthan the content ratio of the filler included in the second sealinglayer 52.

The stacked configuration of the first sealing layer 51 and the secondsealing layer 52 may be provided in the semiconductor light emittingdevice according to any of the embodiments described above; and similareffects can be realized.

Sixth Embodiment

FIG. 14A and FIG. 14B are schematic views illustrating the configurationof a semiconductor light emitting device according to a sixthembodiment.

Namely, FIG. 14B is a schematic plan view; and FIG. 14A is across-sectional view along line C-C′ of FIG. 14B.

As illustrated in FIG. 14A and FIG. 14B, the semiconductor lightemitting device 160 according to this embodiment further includes aperipheral stacked unit 10 p provided in the X-Y plane (the planeperpendicular to the Z-axis direction which is the direction from thesecond major surface 10 a toward the first major surface 10 b) to opposeat least one side of the semiconductor stacked body.

The peripheral stacked unit 10 p is made of the material of thesemiconductor stacked body 10. The peripheral stacked unit 10 p iscovered with the sealing member 50 and the optical layer 60.

In this specific example, the peripheral stacked unit 10 p is providedin the X-Y plane to oppose four sides of the semiconductor stacked body10. In other words, the peripheral stacked unit 10 p encloses thesemiconductor stacked body 10 in the X-Y plane. In this specificexample, the pattern configuration of the peripheral stacked unit 10 pis an annular configuration.

Providing the peripheral stacked unit 10 p can reduce, for example, thestress applied to the semiconductor stacked body 10 when separating eachof the multiple semiconductor stacked bodies 10 by, for example, thedicing described in regard to FIG. 4E. In other words, the impact duringthe dicing is absorbed by the peripheral stacked unit 10 p; and theapplication of the impact to the semiconductor stacked body 10 can besuppressed. Thereby, the occurrence of defects in the semiconductorlayers of the semiconductor stacked body 10 can be suppressed; and ahigh luminous efficiency can be maintained.

Although this specific example is an example in which the peripheralstacked unit 10 p encloses the semiconductor stacked body 10 in the X-Yplane, the embodiment is not limited thereto. The pattern configurationof the peripheral stacked unit 10 p is arbitrary. For example, theperipheral stacked unit 10 p may have a pattern configuration of fourband configurations divided to oppose the four sides of thesemiconductor stacked body 10, respectively. It is unnecessary for theperipheral stacked unit 10 p to be provided to oppose all of the sidesof the semiconductor stacked body 10; and it is sufficient for theperipheral stacked unit 10 p to be provided opposing at least one sideof the semiconductor stacked body 10. It is unnecessary for theperipheral stacked unit 10 p to be provided along the entire length ofthe at least one side of the semiconductor stacked body 10; and it issufficient for the peripheral stacked unit 10 p to be provided opposingat least a portion of the at least one side of the semiconductor stackedbody 10.

Such a peripheral stacked unit 10 p may be provided in the semiconductorlight emitting device according to any of the embodiments describedabove; and similar effects can be realized.

Seventh Embodiment

FIG. 15 is a flowchart illustrating a method for manufacturing asemiconductor light emitting device according to a seventh embodiment.

This embodiment is a method of manufacturing any of the semiconductorlight emitting devices according to the embodiments recited above.Namely, this manufacturing method is a method for manufacturing asemiconductor light emitting device, where the device includes the lightemitting unit 10 d, the first conductive member 30 a, the insulatinglayer 20, the second conductive member 30 b, the sealing member 50, andthe optical layer 60, the light emitting unit 10 d includes thesemiconductor stacked body 10, the first electrode 14, and the secondelectrode 15, the semiconductor stacked body 10 includes the firstsemiconductor layer 11 of the first conductivity type, the secondsemiconductor layer 12 of the second conductivity type, and the lightemitting layer 13 provided between the first semiconductor layer 11 andthe second semiconductor layer 12, the semiconductor stacked body 10includes the first major surface 10 b on the first semiconductor layer11 side and the second major surface 10 a on the second semiconductorlayer 12 side, the first electrode 14 is electrically connected to thefirst semiconductor layer 11 on the second major surface 10 a side, thesecond electrode 15 is electrically connected to the secondsemiconductor layer 12 on the second major surface 10 a side, the firstconductive member 30 a is electrically connected to the first electrode14, the first conductive member 30 a includes the first columnar portion31 a provided on the second major surface 10 a to cover the certainportion 12 p of the second semiconductor layer 12 on the second majorsurface 10 a side, the first columnar portion 31 a is separate from thesecond semiconductor layer 12, the insulating layer 20 is providedbetween the first columnar portion 31 a and the certain portion 12 p ofthe second semiconductor layer 12 on the second major surface 10 a side,the second conductive member 30 b is electrically connected to thesecond electrode 15, the second conductive member 30 b includes thesecond columnar portion 31 b provided on the second major surface 10 a,the sealing member 50 covers the side surface of the first conductivemember 30 a and the side surface of the second conductive member 30 b,the optical layer 60 is an optical layer provided on the first majorsurface 10 b of the semiconductor stacked body 10, and the optical layer60 includes a wavelength conversion unit (the fluorescer layer 61)configured to absorb emitted light emitted from the light emitting layer13 and emit light having a wavelength different from a wavelength of theemitted light.

As illustrated in FIG. 15, the method for manufacturing thesemiconductor light emitting device according to this embodiment formsthe insulating layer 20 covering the certain portion 12 p of the secondsemiconductor layer 12 on the second major surface 10 a side (stepS110). In other words, the processing described in regard to, forexample, FIG. 2C is performed.

As described above, the insulating layer 20 may be formed in a regionexcluding at least a portion of the first electrode 14 and a regionexcluding at least a portion of the second electrode 15. The insulatinglayer 20 may be provided also between the multiple semiconductor stackedbodies 10.

Then, as illustrated in FIG. 15, a conductive film used to form at leasta portion of the first conductive member 30 a is formed on theinsulating layer 20 covering the certain portion 12 p of the secondsemiconductor layer 12 on the second major surface 10 a side (stepS120). In other words, the processing described in regard to, forexample, FIG. 2D, FIG. 2E, and FIG. 3A is performed.

In other words, step S120 may include, for example, the process offorming the seed layer 33, the process of forming the first resist layer37 in a region other than the region corresponding to the firstconnection portion 32 a and the region corresponding to the secondconnection portion 32 b, and the process of forming the connectionportion conductive film 32 f used to form the second layer of the firstconnection portion 32 a and the fourth layer of the second connectionportion 32 b in a region where the first resist layer 37 is notprovided.

As described above, the conductive film used to form at least a portionof the first conductive member 30 a also may be used to form at least aportion of the second conductive member 30 b. This conductive film alsomay be formed to cover at least a portion of the first electrode 14 notcovered with the insulating layer 20 and at least a portion of thesecond electrode 15 not covered with the insulating layer 20.

Thereby, high electrode connectability can be maintained; and asemiconductor light emitting device suited to downsizing can bemanufactured.

As described above, the formation of the insulating layer recited above(step S110) and the formation of the conductive film recited above (stepS120) can be implemented collectively for the multiple semiconductorstacked bodies 10 of the substrate 10 s on which the multiplesemiconductor stacked bodies 10 are provided. Thereby, high electrodeconnectability can be maintained; and a semiconductor light emittingdevice suited to downsizing can be manufactured with high productivity.

The manufacturing method according to this embodiment may furtherinclude the process of forming the first columnar portion 31 a on theconductive film (the first connection portion 32 a) used to form atleast a portion of the first conductive member 30 a, where theconductive film is formed on the insulating layer 20 covering thecertain portion 12 p of the second semiconductor layer 12 on the secondmajor surface 10 a side. In other words, the processing described inregard to FIG. 3B and FIG. 3C also may be implemented.

In the case where the connection portion conductive film 32 f is omittedas in the semiconductor light emitting devices 110 d, 110 e, and 110 fdescribed in regard to FIG. 6A to FIG. 6C, the process of forming theconductive film used to form at least a portion of the first conductivemember 30 a on the insulating layer 20 covering the certain portion 12 pof the second semiconductor layer 12 on the second major surface 10 aside of step S120 becomes a process of forming the first columnarportion 31 a on the insulating layer 20 covering the certain portion 12p of the second semiconductor layer 12 on the second major surface 10 aside. By this method as well, high electrode connectability can bemaintained; and a semiconductor light emitting device suited todownsizing can be manufactured.

Red fluorescers may include, for example, the following. However, thered fluorescer of the embodiments is not limited to the following:

Y₂O₂S:Eu

Y₂O₂S:Eu+pigment

Y₂O₃:Eu

Zn₃(PO₄)₂:Mn

(Zn, Cd)S:Ag+In₂O₃

(Y, Gd, Eu)BO₃

(Y, Gd, Eu)₂O₃

YVO₄:Eu

La₂O₂S:Eu, Sm

LaSi₃N₅:Eu²⁺

α-sialon:Eu²⁺

CaAlSiN₃:Eu²⁺

CaSiN_(x):Eu²⁺

CaSiN_(x):Ce²⁺

M₂Si₅N:Eu²⁺

CaAlSiN₃:Eu²⁺

(SrCa)AlSiN₃:Eu^(X+)

Sr_(x)(Si_(y)Al₃)_(z)(O_(x)N):Eu^(X+)

Green fluorescers may include, for example, the following. However, thegreen fluorescer of the embodiments is not limited to the following:

ZnS:Cu, Al

ZnS:Cu, Al+pigment

(Zn, Cd)S:Cu, Al

ZnS:Cu, Au, Al, +pigment

Y₃Al₅O₁₂:Tb

Y₃(Al, Ga)₅O₁₂:Tb

Y₂SiO₅:Tb

Zn₂SiO₄:Mn

(Zn, Cd)S:Cu

ZnS:Cu

Zn₂SiO₄:Mn

ZnS:Cu+Zn₂SiO₄:Mn

Gd₂O₂S:Tb

(Zn, Cd)S:Ag

ZnS:Cu, Al

Y₂O₂S:Tb

ZnS:Cu, Al+In₂O₃

(Zn, Cd)S:Ag+In₂O₃

(Zn, Mn)₂SiO₄

BaAl₁₂O₁₉:Mn

(Ba, Sr, Mg)O.aAl₂O₃:Mn

LaPO₄:Ce, Tb

Zn₂SiO₄:Mn

ZnS:Cu

3(Ba, Mg, Eu, Mn)O.8Al₂O₃

La₂O₃.0.2SiO₂.0.9P₂O₅:Ce, Tb

CeMgAl₁₁O₁₉:Tb

CaSc₂O₄:Ce

(BrSr)SiO₄:Eu

α-sialon:Yb²⁺

β-sialon:Eu²⁺

(SrBa)YSi₄N₇:Eu²⁺

(CaSr)Si₂O₄N₇:Eu²⁺

Sr(SiAl)(ON):Ce

Blue fluorescers may include, for example, the following. However, theblue fluorescer of the embodiments is not limited to the following:

ZnS:Ag

ZnS:Ag+pigment

ZnS:Ag, Al

ZnS:Ag, Cu, Ga, Cl

ZnS:Ag+In₂O₃

ZnS:Zn+In₂O₃

(Ba, Eu)MgAl₁₀O₁₇

(Sr, Ca, Ba, Mg)₁₀(PO₄)6Cl₂:Eu

Sr₁₀(PO₄)6Cl₂:Eu

(Ba, Sr, Eu)(Mg, Mn)Al₁₀O₁₇

10(Sr, Ca, Ba, Eu).6PO₄.Cl₂

BaMg₂Al₁₆O₂₅:Eu

Yellow fluorescers may include, for example, the following. However, theyellow fluorescer of the embodiments is not limited to the following:

Li(Eu, Sm)W₂O₈

(Y, Gd)₃, (Al, Ga)₅O₁₂:Ce³⁺

Li₂SrSiO₄:Eu²⁺

(Sr(Ca, Ba))₃SiO₅:Eu²⁺

SrSi₂ON_(2.7):Eu²⁺

In the specification, “nitride semiconductor” includes all compositionsof semiconductors of the chemical formula B_(x)In_(y)Al_(z)Ga_(1-x-y-z)N(0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≦1) for which the compositionalproportions x, y, and z are changed within the ranges respectively.“Nitride semiconductor” further includes group V elements other than N(nitrogen) in the chemical formula recited above and any of variousdopants added to control the conductivity type, etc.

According to the embodiments as described above, high electrodeconnectability can be maintained; and a semiconductor light emittingdevice suited to downsizing and a method for manufacturing the same canbe provided.

In the specification of the application, “perpendicular” and “parallel”refer to not only strictly perpendicular and strictly parallel but alsoinclude, for example, the fluctuation due to manufacturing processes,etc. It is sufficient to be substantially perpendicular andsubstantially parallel.

Hereinabove, exemplary embodiments of the invention are described withreference to specific examples. However, the invention is not limited tothese specific examples. For example, one skilled in the art maysimilarly practice the invention by appropriately selecting specificconfigurations of components included in light emitting units such assemiconductor layers, light emitting layers, electrodes, conductivelayers, reflective layers, and contact electrode layers and componentsincluded in semiconductor light emitting devices such as conductivemembers, columnar portions, connection portions, insulating layers,sealing members, sealing layers, optical layers, wavelength conversionunits, fluorescer layers, fluorescers, transparent members, hard films,etc., from known art. Such practice is included in the scope of theinvention to the extent that similar effects thereto are obtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor light emitting devices and methods formanufacturing semiconductor light emitting devices practicable by anappropriate design modification by one skilled in the art based on thesemiconductor light emitting devices and the methods for manufacturingthe semiconductor light emitting devices described above as embodimentsof the invention also are within the scope of the invention to theextent that the purport of the embodiments of the invention is included.

Furthermore, various modifications and alterations within the spirit ofthe invention will be readily apparent to those skilled in the art. Allsuch modifications and alterations should therefore be seen as withinthe scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modification as would fall within the scope andspirit of the inventions.

1. A semiconductor light emitting device, comprising: a light emittingunit including a semiconductor stacked body including a firstsemiconductor layer of a first conductivity type, a second semiconductorlayer of a second conductivity type, and a light emitting layer providedbetween the first semiconductor layer and the second semiconductorlayer, the semiconductor stacked body having a first major surface on afirst semiconductor layer side and a second major surface on a secondsemiconductor layer side, a first electrode electrically connected tothe first semiconductor layer on a second major surface side, and asecond electrode electrically connected to the second semiconductorlayer on the second major surface side; a first conductive memberelectrically connected to the first electrode, the first conductivemember including a first columnar portion provided on the second majorsurface to cover a portion of the second semiconductor layer on thesecond major surface side, the first columnar portion being separatefrom the second semiconductor layer; an insulating layer providedbetween the first columnar portion and the portion of the secondsemiconductor layer on the second major surface side; a secondconductive member electrically connected to the second electrode, thesecond conductive member including a second columnar portion provided onthe second major surface; a sealing member covering a side surface ofthe first conductive member and a side surface of the second conductivemember; and an optical layer provided on the first major surface of thesemiconductor stacked body, the optical layer including a wavelengthconversion unit configured to absorb an emitted light emitted from thelight emitting layer and emit light having a wavelength different from awavelength of the emitted light.
 2. The device according to claim 1,wherein the first conductive member further includes a first connectionportion covering at least a portion of the insulating layer toelectrically connect the first electrode to the first columnar portion.3. The device according to claim 2, wherein the first connection portionincludes at least one selected from Cu (copper), Ni (nickel), and Al(aluminum).
 4. The device according to claim 1, wherein the secondconductive member further includes a second connection portion having aportion extending along a plane perpendicular to a direction from thesecond major surface toward the first major surface to electricallyconnect the second electrode to the second columnar portion.
 5. Thedevice according to claim 1, wherein a first end surface on a side ofthe first conductive member opposite to the semiconductor stacked bodyand a second end surface on a side of the second conductive memberopposite to the semiconductor stacked body are asymmetrical.
 6. Thedevice according to claim 1, wherein the first conductive member furtherincludes a first surface layer provided on a first end surface on a sideof the first conductive member opposite to the semiconductor stackedbody, the first surface layer having a wettability higher than awettability of a material of the first columnar portion.
 7. The deviceaccording to claim 6, wherein the first surface layer includes a layer,and at least one processing selected from water-soluble preflux,electroless Ni/Au plating, and AuSn plating is performed on the layer.8. The device according to claim 1, wherein the first columnar portionhas a first surface-roughened portion provided in a side surface of thefirst columnar portion.
 9. The device according to claim 1, wherein thesealing member has a portion including a first sealing layer and asecond sealing layer, a distance between the second sealing layer andthe optical layer being longer than a distance between the first sealinglayer and the optical layer, the first sealing layer having a heatresistance higher than a heat resistance of the second sealing layer.10. The device according to claim 1, further comprising a peripheralstacked unit provided opposing at least one side of the semiconductorstacked body in a plane perpendicular to a direction from the secondmajor surface toward the first major surface, the peripheral stackedunit being made of a material of the semiconductor stacked body andbeing covered with the sealing member and the optical layer.
 11. Thedevice according to claim 1, wherein the optical layer includes afluorescer layer and a hard film, the fluorescer layer including afluorescer, the hard film being provided on a side of the fluorescerlayer opposite to the semiconductor stacked body and having a hardnesshigher than a hardness of the fluorescer layer.
 12. The device accordingto claim 1, wherein the first columnar portion and the second columnarportion include at least one selected from Cu (copper), Ni (nickel), andAl (aluminum).
 13. The device according to claim 1, wherein the sealingmember includes an epoxy resin containing at least one selected from aquartz filler and an alumina filler.
 14. The device according to claim1, wherein the insulating layer includes at least one selected frompolyimide and polybenzoxazole.
 15. The device according to claim 1,wherein a length of the first semiconductor layer along a direction fromthe first columnar portion toward the second columnar portion is longerthan a length of the first semiconductor layer along a directionorthogonal to the direction from the first columnar portion toward thesecond columnar portion and a direction from the second major surfacetoward the first major surface.
 16. The device according to claim 1,wherein a portion of the first semiconductor layer at the second majorsurface of the semiconductor stacked body is exposed by a portion of thesecond semiconductor layer and a portion of the light emitting layerbeing selectively removed, and the first electrode is provided on theexposed portion of the first semiconductor layer.
 17. The deviceaccording to claim 1, wherein the first conductivity type is an n typeand the second conductivity type is a p type.
 18. The device accordingto claim 1, wherein a thermal decomposition temperature of theinsulating layer is higher than a thermal decomposition temperature ofthe sealing member.
 19. A method for manufacturing a semiconductor lightemitting device, the semiconductor light emitting device including alight emitting unit, a first conductive member, an insulating layer, asecond conductive member, a sealing member, and an optical layer, thelight emitting unit including a semiconductor stacked body, a firstelectrode, and a second electrode, the semiconductor stacked bodyincluding a first semiconductor layer of a first conductivity type, asecond semiconductor layer of a second conductivity type, and a lightemitting layer provided between the first semiconductor layer and thesecond semiconductor layer, the semiconductor stacked body having afirst major surface on a first semiconductor layer side and a secondmajor surface on a second semiconductor layer side, the first electrodebeing electrically connected to the first semiconductor layer on asecond major surface side, the second electrode being electricallyconnected to the second semiconductor layer on the second major surfaceside, the first conductive member being electrically connected to thefirst electrode, the first conductive member including a first columnarportion provided on the second major surface to cover a portion of thesecond semiconductor layer on the second major surface side, the firstcolumnar portion being separate from the second semiconductor layer, theinsulating layer being provided between the first columnar portion andthe portion of the second semiconductor layer on the second majorsurface side, the second conductive member being electrically connectedto the second electrode and including a second columnar portion providedon the second major surface, the sealing member covering a side surfaceof the first conductive member and a side surface of the secondconductive member, the optical layer being provided on the first majorsurface of the semiconductor stacked body and including a wavelengthconversion unit configured to absorb an emitted light emitted from thelight emitting layer and emit light having a wavelength different from awavelength of the emitted light, the method comprising: forming theinsulating layer to cover the portion of the second semiconductor layeron the second major surface side; and forming a conductive film on theinsulating layer covering the portion of the second semiconductor layeron the second major surface side, the conductive film being used to format least a portion of the first conductive member.
 20. The methodaccording to claim 19, wherein the forming the insulating layer and theforming of the conductive film are implemented collectively for aplurality of the semiconductor stacked bodies provided on a substrate.